Search results for " electroluminescence"

showing 7 items of 7 documents

Electrical-optical characterization of multijunction solar cells under 2000X concentration

2014

In the framework of the FAE "Fotovoltaico ad Alta Efficienza" ("High Efficiency Photovoltaic") Research Project (PO FESR Sicilia 2007/2013 4.1.1.1), we have performed electrical and optical characterizations of commercial InGaP/InGaAs/Ge triple-junction solar cells (1 cm2) mounted on a prototype HCPV module, installed in Palermo (Italy). This system uses a reflective optics based on rectangular off-axis parabolic mirror with aperture 45×45 cm2 leading to a geometrical concentration ratio of 2025. In this study, we report the I-V curve measured under incident power of about 700 W/m2 resulting in an electrical power at maximum point (PMP) of 41.4 W. We also investigated the optical properties…

Engineeringbusiness.industryParabolic reflectorBand gapAperturePhotovoltaic systemElectroluminescenceConcentration ratioSpectral lineSemiconductorOpticsMultijunction InGaP/InGaAs/Ge solar cells high concentration photovoltaic electroluminescence I-V curveOptoelectronicsbusiness
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Morphological, electrical and optical properties of organic light-emitting diodes with a LiF/Al cathode and an Al-hydroxyquinoline/diamine junction

2004

Abstract We report the results of the morphological, electrical and optical characterisation of double-layer Alq3-based organic emitting diodes with a lithium fluoride (LiF)/Al cathode. A detailed electron microscopy investigation of their cross-section shows the presence of LiF isolated grains underneath the Al film. Due to the introduction of the LiF layer, luminance was larger than 30,000 cd/m2 at a bias voltage VB=25 V with a maximum external luminous efficiency as large as 46 lm/W at VB=20 V. Performing on/off VB cycles at a very low frequency, each time a recovery of the initial electric and luminous performance was observed. The non-exponential decay of both electric current and lumi…

ChemistryMechanical EngineeringMetals and AlloysAnalytical chemistryalq3; electroluminescence; organic diodes; thin filmsLithium fluorideBiasingElectroluminescenceCondensed Matter PhysicsCathodeElectronic Optical and Magnetic Materialslaw.inventionchemistry.chemical_compoundMechanics of MaterialslawMaterials ChemistryOLEDElectric currentLuminous efficacyDiode
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Electron drift properties in high pressure gaseous xenon

2018

[EN] Gaseous time projection chambers (TPC) are a very attractive detector technology for particle tracking. Characterization of both drift velocity and di¿usion is of great importance to correctly assess their tracking capabilities. NEXT-White is a High Pressure Xenon gas TPC with electroluminescent ampli¿cation, a 1:2 scale model of the future NEXT-100detector, which will be dedicated to neutrinoless double beta decay searches. NEXT-White has been operating at Canfranc Underground Laboratory (LSC) since December2016. The drift parameters have been measured using 83mKr for a range of reduced drift ¿elds at two di¿erent pressure regimes, namely 7.2 bar and 9.1 bar. Theresults have been comp…

Physics - Instrumentation and DetectorsPhysics::Instrumentation and DetectorsLibrary scienceFOS: Physical sciencesCharge transport01 natural sciences7. Clean energyElectron driftHigh Energy Physics - ExperimentTECNOLOGIA ELECTRONICAHigh Energy Physics - Experiment (hep-ex)Political science0103 physical sciencesmedia_common.cataloged_instanceEuropean unionNuclear Experiment (nucl-ex)010306 general physicsInstrumentationNuclear ExperimentMathematical Physicsmedia_commonCharge transport and multiplication in gas010308 nuclear & particles physicsEuropean researchMultiplication and electroluminescence in rare gases and liquidsInstrumentation and Detectors (physics.ins-det)Double-beta decay detectorsGaseous imaging and tracking detectorsHigh pressureHigh Energy Physics::ExperimentJournal of Instrumentation
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Millisecond radiative recombination in poly(phenylene vinylene)-based light-emitting diodes from transient electroluminescence

2007

The current and electroluminescence transient responses of standard poly phenylene vinylene -based light-emitting devices have been investigated. The electroluminescence time response is longer milliseconds scale than the current switch-off time by more than one order of magnitude, in the case of small area devices 0.1 cm2 . For large area devices 6 cm2 the electroluminescence decay time decreases from 1.45 ms to 100 s with increasing bias voltage. The fast current decay limits the electroluminescence decay at higher voltages. Several approaches are discussed to interpret the observed slow decrease of electroluminescence after turning off the bias. One relies upon the Langevin-type bimolecu…

Materials scienceCarrier transportConducting polymersGeneral Physics and AstronomyOrganic light emitting diodesElectroluminescencelaw.inventionCurrent density:FÍSICA [UNESCO]lawPhenyleneOLEDSpontaneous emissionMinority carriersbusiness.industryUNESCO::FÍSICABiasingLight emitting diodesElectroluminescenceBias voltageElectron-hole recombinationOptoelectronicsElectron trapsbusinessConducting polymers ; Organic light emitting diodes ; Electron-hole recombination ; Electroluminescence ; Minority carriers ; Electron traps ; Current densityCurrent densityOrder of magnitudeLight-emitting diode
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Electroluminescence and transport properties in amorphous silicon nanostructures

2006

We report the results of a detailed study on the structural, electrical and optical properties of light emitting devices based on amorphous Si nanostructures. Amorphous nanostructures may constitute an interesting system for the monolithic integration of optical and electrical functions in Si ULSI technology. In fact, they exhibit an intense room temperature electroluminescence (EL), with the advantage of being formed at a temperature of 900 °C, while at least 1100 °C is needed for the formation of Si nanocrystals. Optical and electrical properties of amorphous Si nanocluster devices have been studied in the temperature range between 30 and 300 K. The EL is seen to have a bell-shaped trend …

Amorphous siliconVISIBLE ELECTROLUMINESCENCEMaterials sciencePhysics and Astronomy (miscellaneous)nanostructures; silicon; elecroluminescenceExcitonBioengineeringElectronQUANTUM DOTSElectroluminescenceSettore ING-INF/01 - ElettronicaSettore FIS/03 - Fisica Della Materiachemistry.chemical_compoundnanostructuresGeneral Materials ScienceSI-RICH SIO2Electrical and Electronic EngineeringLIGHT-EMITTING DEVICESEngineering (miscellaneous)business.industryMechanical EngineeringsiliconGeneral ChemistryAtmospheric temperature rangeAmorphous solidCHEMICAL-VAPOR-DEPOSITIONelecroluminescenceNanocrystalchemistryMechanics of MaterialsOptoelectronicsMaterials Science (all)businessLuminescenceNanotechnology
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Ionization and scintillation response of high-pressure xenon gas to alpha particles

2013

High-pressure xenon gas is an attractive detection medium for a variety of applications in fundamental and applied physics. In this paper we study the ionization and scintillation detection properties of xenon gas at 10 bar pressure. For this purpose, we use a source of alpha particles in the NEXT-DEMO time projection chamber, the large scale prototype of the NEXT-100 neutrinoless double beta decay experiment, in three different drift electric field configurations. We measure the ionization electron drift velocity and longitudinal diffusion, and compare our results to expectations based on available electron scattering cross sections on pure xenon. In addition, two types of measurements add…

Scintillation (physics)IonizationMECANICA DE LOS MEDIOS CONTINUOS Y TEORIA DE ESTRUCTURASPhysics - Instrumentation and DetectorsMaterials scienceIonitzacióPhysics::Instrumentation and DetectorsFOS: Physical scienceschemistry.chemical_elementElectronCharge transportNuclear excitation01 natural sciences7. Clean energyHigh Energy Physics - ExperimentTECNOLOGIA ELECTRONICAHigh Energy Physics - Experiment (hep-ex)Gaseous detectorsXenonComptadors de centelleigIonization and excitation processesIonization0103 physical sciencesPhysics::Atomic and Molecular ClustersNuclear Experiment (nucl-ex)010306 general physicsInstrumentation and Methods for Astrophysics (astro-ph.IM)Nuclear ExperimentInstrumentationMathematical PhysicsHeliumDetectors de radiacióScintillationTime projection chamber010308 nuclear & particles physicsFísicaMultiplication and electroluminescence in rare gases and liquidsInstrumentation and Detectors (physics.ins-det)Alpha particleDouble-beta decay detectorschemistryNuclear countersScintillation counterExcitació nuclearAtomic physicsAstrophysics - Instrumentation and Methods for Astrophysics
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Luminescent Ionic Transition-Metal Complexes for Light-Emitting Electrochemical Cells

2012

Higher efficiency in the end-use of energy requires substantial progress in lighting concepts. All the technologies under development are based on solid-state electroluminescent materials and belong to the general area of solid-state lighting (SSL). The two main technologies being developed in SSL are light-emitting diodes (LEDs) and organic light-emitting diodes (OLEDs), but in recent years, light-emitting electrochemical cells (LECs) have emerged as an alternative option. The luminescent materials in LECs are either luminescent polymers together with ionic salts or ionic species, such as ionic transition-metal complexes (iTMCs). Cyclometalated complexes of Ir(III) are by far the most util…

IonsMaterials scienceLuminescenceLightMolecular StructureIonic bondingNanotechnologycopper(I) complexes; electroluminescence; iridium(III) complexes; light-emitting electrochemical cells; ruthenium(II) complexesGeneral ChemistryElectrochemical TechniquesElectroluminescenceCatalysisElectrochemical celllaw.inventionTransition metallawOLEDOrganometallic CompoundsTransition ElementsLuminescenceLight-emitting diodeDiode
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